Title :
Electrical characterization of 5kV SiC bipolar diodes in switching transient regime
Author :
Salah, Tarek Ben ; Risaletto, Damien ; Raynaud, Christophe ; Besbes, Kamel ; Ghedira, Sami ; Bergogne, Dominique ; Planson, Dominique ; Morel, Hervé
Author_Institution :
INSA Lyon, Villeurbanne
Abstract :
A new experimental set-up is developed and validated to characterize high voltage diodes in switch transient regime. Parameters extracted from DMTVCA and OCVD techniques is validated in a buck converter on a resistive load. The experimental set-up enable to measure nice current and voltage transient characteristics, i.e. without noise and high parasitic wiring influence. Experimental results are confronted to device simulations and a good agreement is found.
Keywords :
power semiconductor diodes; semiconductor device models; silicon compounds; switching transients; DMTVCA techniques; OCVD techniques; SiC; bipolar diodes; buck converter; depletion mode transient voltage current analysis; device simulation; electrical characterization; high-voltage diodes; open circuit voltage decay technique; parasitic wiring; resistive load; switching transient regime; Diodes; Silicon carbide; Device characterization; Device modeling; High Voltage power converters; High temperature electronics; JFET; Power semiconductor device; Silicon Carbide;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417681
