Improvements in the instantaneous-bandwidth capability of RF Power Transistors using in-package high-k capacitors

RF Power Transistors, by design, have an upper limit to the input-signal bandwidth that can be amplified without incurring excessive distortion. The interaction between components internal to the pre-matched RF Power Transistor and on the external circuit board creates resonances at frequencies that are of the order of the modulation bandwidth of the signal. In this paper, we demonstrate a technique to improve the `video-bandwidth´ (VBW) capability of RF Power transistors using high-k capacitors. The improvement is more than 2 times a standard device. Also, digital predistortion performance is demonstrated with excellent results for narrow band as well as wideband signals (>;50 MHz). This capability enables wideband RF Power Amplifier Design for next generation systems demanding wider bandwidth / faster data rates.