DocumentCode :
2586112
Title :
A New Oxide Damage Characterization Technique For Evaluating Hot Carrier Reliability Of Flash Memory Cell After P/E Cycles
Author :
Chung, S.S. ; Yih, C.M. ; Cheng, S.M. ; Liang, M.S.
Author_Institution :
Department of Electronic Engineering, National Chiao Tung University, Taiwan
fYear :
1997
fDate :
10-12 June 1997
Firstpage :
111
Lastpage :
112
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
Type :
conf
DOI :
10.1109/VLSIT.1997.623723
Filename :
623723
Link To Document :
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