Advanced Components for Applications in S-Band and X-Band Radars

Performance issues in S-Band and X-Band radar applications, have been investigated in parallel paths. The first approach continued with the basic GaAs based MESFET and pHEMT devices with the addition of field plate structures to enhance the transistor source-to-drain breakdown, enabling operation at higher voltages and producing significant improvements in device operation. The second direction questioned the basic material properties underlying the device structures. This methodology has led to the investigation of a number of pHEMT and HEMT designs based on SiC, GaN on SiC, and GaN on silicon devices for both S-Band and X-Band radar applications.