Title :
Silicon-Germanium for Phased Array Radars
Author :
Berg, Håkan ; Thiesies, Heiko ; Hemmendorff, Erik ; Sidiropoulos, Georgios ; Hedman, Jonas
Author_Institution :
Microwave & Antennas, Saab Microwave Syst., Goteborg
Abstract :
Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 mum SiGe-BiCMOS process with an fT of 70 GHz.
Keywords :
integrated circuits; phased array radar; silicon compounds; BiCMOS process; SiGe; T-R-modules; amplitude controlling IC; austriamicrosystems; frequency 70 GHz; military AESA-radars; phase controlling IC; phased array radars; size 0.35 mum; Circuits; Costs; Gallium arsenide; Germanium silicon alloys; Manufacturing processes; Noise figure; Phased arrays; Pulp manufacturing; Radar; Silicon germanium;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772280
