Title :
A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens
Author :
Al Hadi, Richard ; Sherry, Hani ; Grzyb, Janusz ; Baktash, Neda ; Zhao, Yan ; Öjefors, Erik ; Kaiser, Andreas ; Cathelin, Andreia ; Pfeiffer, Ullrich
Author_Institution :
IHCT, Univ. of Wuppertal, Wuppertal, Germany
Abstract :
This paper presents a lens-integrated terahertz imaging detector implemented in a 65 nm bulk CMOS process technology. The back-side illumination through a silicon lens increases the imaging SNR by 7-15 dB. The broadband detector design has been verified from 0.6 to 1 THz. At 1 THz the circuit achieves a noise equivalent power (NEP) of 66 pW/√Hz and a responsivity (Rv) of 800 V/W for back-side illumination. The first 1 THz CMOS active imaging results with a lens are presented.
Keywords :
CMOS image sensors; elemental semiconductors; lenses; silicon; terahertz wave imaging; CMOS process; back-side illumination; broadband detector design; frequency 0.6 THz to 1 THz; gain 7 dB to 17 dB; integrated lens; noise equivalent power; size 65 nm; terahertz imaging detector; Capacitors; Dipole antennas; Lenses; Logic gates; Nickel; CMOS; Submillimeter wave detectors; resistive mixer; silicon lens; submillimeter wave imaging; terahertz direct detection;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972870
