A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens

Author

Al Hadi, Richard ; Sherry, Hani ; Grzyb, Janusz ; Baktash, Neda ; Zhao, Yan ; Öjefors, Erik ; Kaiser, Andreas ; Cathelin, Andreia ; Pfeiffer, Ullrich

Author_Institution

IHCT, Univ. of Wuppertal, Wuppertal, Germany

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents a lens-integrated terahertz imaging detector implemented in a 65 nm bulk CMOS process technology. The back-side illumination through a silicon lens increases the imaging SNR by 7-15 dB. The broadband detector design has been verified from 0.6 to 1 THz. At 1 THz the circuit achieves a noise equivalent power (NEP) of 66 pW/√Hz and a responsivity (R_v) of 800 V/W for back-side illumination. The first 1 THz CMOS active imaging results with a lens are presented.

Keywords

CMOS image sensors; elemental semiconductors; lenses; silicon; terahertz wave imaging; CMOS process; back-side illumination; broadband detector design; frequency 0.6 THz to 1 THz; gain 7 dB to 17 dB; integrated lens; noise equivalent power; size 65 nm; terahertz imaging detector; Capacitors; Dipole antennas; Lenses; Logic gates; Nickel; CMOS; Submillimeter wave detectors; resistive mixer; silicon lens; submillimeter wave imaging; terahertz direct detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972870

Filename

5972870