Title :
Current Trends and Challenges in III-V HBT Compact Modeling
Author :
Rudolph, Matthias
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Abstract :
This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/f and shot noise for nonlinear simulation. Although compact HBT modeling already reached a high level of accuracy, certain limitations remain that will also be addressed.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; GaAs; III-V HBT compact modeling; InP; shot noise; weakly nonlinear behavior; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Integrated circuit modeling; Optical amplifiers; Oscillators; Power amplifiers; Voltage;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772283
