DocumentCode
2586276
Title
A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers
Author
Inoue, Akira ; Amasuga, Hirotaka ; Goto, Seiki ; Miyazaki, Moriyasu
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
282
Lastpage
285
Abstract
A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.
Keywords
millimetre wave power amplifiers; power HEMT; drain-gate separation; millimeter-wave high power amplifiers; nonlinear drain resistance pHEMT model; parasitic power dissipation; resistor; Electrical resistance measurement; Frequency; High power amplifiers; Millimeter wave measurements; PHEMTs; Power amplifiers; Power dissipation; Power generation; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772284
Filename
4772284
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