DocumentCode :
2586281
Title :
C-band phase and gain control MMIC
Author :
Jacomb-Hood, A.W. ; Windyka, J.A. ; Booth, M.S. ; Snow, K.H. ; Adams, S.B.
Author_Institution :
GE Electron. Lab., Syracuse, NY, USA
fYear :
1988
fDate :
6-9 Nov. 1988
Firstpage :
257
Lastpage :
260
Abstract :
A C-band phase and gain control MMIC (monolithic microwave integrated circuit) has demonstrated a maximum gain of 31+or-2 dB with 20 dB of gain control from 5-6 GHz. The 6-bit phase shifter has an RMS phase error of less than 3.1 degrees . Lumped elements result in a small (5.4-mm*2.15-mm), low-cost MMIC. The variable-gain-amplifier features a segmented dual-gate FET. Sensitivity analysis was used to select a phase-bit design with minimum sensitivity to process variations.<>
Keywords :
MMIC; field effect integrated circuits; gain control; phase control; 29 to 33 dB; 5 to 6 GHz; C-band; MMIC; RMS phase error; gain control; phase shifter; phase-bit design; process variations; segmented dual-gate FET; sensitivity; Circuits; Costs; Digital control; FETs; Gain control; Gain measurement; Low-noise amplifiers; MMICs; Phase shifters; Phased arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
Type :
conf
DOI :
10.1109/GAAS.1988.11070
Filename :
11070
Link To Document :
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