DocumentCode
2586325
Title
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design
Author
Giacomo, Valeria Di ; Santarelli, Alberto ; Raffo, Antonio ; Traverso, Pier Andrea ; Schreurs, Dominique ; Lonac, Julio ; Resca, Davide ; Vannini, Giorgio ; Filicori, Fabio ; Pagani, Maurizio
Author_Institution
Dept. of Eng., Univ. of Ferrara, Ferrara
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
294
Lastpage
297
Abstract
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit modelling; network analysers; GaAs; LS-VNA; PHEMT; cold FET mixer design; large-signal vector network analyser; nonlinear electron device modelling; nonlinear empirical model; resistive mixer; Accuracy; Convolution; Design engineering; Electron devices; FETs; Frequency estimation; Integrated circuit modeling; Mathematical model; Predictive models; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772287
Filename
4772287
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