DocumentCode :
2586336
Title :
Class-J RF power amplifier with wideband harmonic suppression
Author :
Tuffy, Neal ; Zhu, Anding ; Brazil, Thomas J.
Author_Institution :
RF & Microwave Res. Group, Univ. Coll. Dublin, Dublin, Ireland
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
This work outlines a design approach used for achieving highly efficient power amplification over a wide bandwidth, given narrowband passive harmonic load-pull results at a single center frequency. Specific considerations have been given to harmonic suppression concerns which are addressed by appropriate choice of matching network topology. The method is justified by amplifier fabrication using a commercially available 10W GaN HEMT transistor and achieving an efficiency of at least 60% over a 15% bandwidth from 2.3-2.7GHz. Output power between 10-12W was delivered across the band, centered at 2.5GHz. Harmonic suppression of at least -41dBc and -39dBc was obtained across the second and third harmonic bands respectively, largely removing the dependency on post-filtering.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; harmonics suppression; high electron mobility transistors; wide band gap semiconductors; Class-J RF power amplifier; GaN; HEMT transistor; amplifier fabrication; bandwidth 2.3 GHz to 2.7 GHz; frequency 2.5 GHz; narrowband passive harmonic load-pull; network topology; power 10 W to 12 W; wideband harmonic suppression; Bandwidth; Harmonic analysis; Harmonics suppression; Impedance; Power amplifiers; Power harmonic filters; Class-J; harmonic suppression; high efficiency; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5972873
Filename :
5972873
Link To Document :
بازگشت