Title :
Concurrent planar multiharmonic dual-band load coupling network for switching-mode power amplifiers
Author :
Kalim, Danish ; Negra, Renato
Author_Institution :
Mixed-Signal CMOS Circuits, RWTH Aachen Univ., Aachen, Germany
Abstract :
This paper presents a concept to design a compact planar multiharmonic load transformation network (MHLTN) for the realisation of highly efficient dual-band power amplifiers (PAs). The proposed MHLTN consisting of only transmission-lines can precisely achieve impedance terminations at two distinct nonharmonic frequencies including up to three harmonics without switches or tuning elements. High impedance stubs are deliberately inserted at particular sections of the network for the harmonic frequency termination to be controlled. The topology was applied to implement a class-E PA using a GaN High Electron Mobility Transistor (HEMT) in a hybrid design for GSM1810 and LTE2655 operation. The measured impedances of the passive switchless MHLTN for a dual-band class-E load coupling network are in good agreement with simulation results. With a dual-band input matching network, the measurement results have shown 78.4% and 61.3% of peak power added efficiency (PAE) with an associated output power of 37.8 dBm and 36.9 dBm in the lower and upper band, respectively.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GSM1810 operation; GaN; HEMT; LTE2655 operation; class-E load coupling network; compact planar multiharmonic load transformation network; concurrent planar multiharmonic dual-band load coupling network; dual-band input matching network; efficiency 61.3 percent; efficiency 78.4 percent; harmonic frequency termination; high electron mobility transistor; high impedance stubs; passive switchless MHLTN; power added efficiency; switching-mode power amplifiers; transmission lines; Dual band; Frequency measurement; Harmonic analysis; Impedance; Microwave FETs; Power generation; Transmission lines; Class-E; GaN HEMT; dual-band; optimum impedances; output power; power added efficiency (PAE);
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972891