Title :
The Impact of Technology Node Scaling on nMOS SPDT RF Switches
Author :
Thrivikraman, Tushar K. ; Kuo, Wei-Min Lance ; Comeau, Jonathan P. ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
This work presents a comparison of three single-pole double-throw (SPDT) nMOS RF switches implemented in commercially available Si-based 180, 130, and 90 nm technologies. In addition, a new series-shunt switch is presented that offers a means to improve switch isolation. Measured results of these RF switches demonstrates how technology node scaling impacts RF switch design and provides insight into the complicated trade-offs between insertion loss, isolation, and linearity.
Keywords :
field effect transistor circuits; field effect transistor switches; insertion loss; linearity; series-shunt switch; switch isolation; technology node scaling; three single-pole double-throw nMOS RF switches; CMOS technology; Germanium silicon alloys; Insertion loss; Integrated circuit technology; Isolation technology; MOS devices; Microwave technology; Radio frequency; Silicon germanium; Switches;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772307
