DocumentCode
2586733
Title
IEEE International Electron Devices Meeting 2003
fYear
2003
fDate
8-10 Dec. 2003
Abstract
The following topics are dealt with: advanced SRAM and SOC; CMOS strained silicon devices; process technology; Hf-based gate dielectrics; high performance SiGe; bipolar devices and thermal effects; advanced interconnect processes; CMOS interconnect reliability; flash reliability; hot carrier effects; displays, sensors and MEMS; organic and inorganic thin film transistors; device and process modeling for deep submicron technology; new concept memory; advanced logic technology; compound semiconductors; quantum and optical devices metal gate technology; NBTI reliability; RF power and passive components; embedded DRAM; advanced carrier transport modeling; advanced source/drain junction and salicide technologies; ESD, SER and interconnect reliability; nanoscale phenomena based memories; quantum electronics; wide bandgap power electronics; nonvolatile memory technology; nanocrystal and SONOS memory; aggressively scaled planar devices; innovative process integration for sub 50 nm logic, memory and mixed signal devices; device physics and carrier transport; flash, MRAM, FeRAM; low-k integration in Cu BEOL; SiO/sub 2/ and high-k reliability; inertial/RF/optical MEMS.
Keywords
CMOS integrated circuits; DRAM chips; SRAM chips; dielectric materials; display devices; electrostatic discharge; ferroelectric storage; flash memories; hot carriers; integrated circuit interconnections; integrated circuit reliability; integrated logic circuits; magnetic storage; micromechanical devices; microsensors; mixed analogue-digital integrated circuits; nanoelectronics; power electronics; quantum optics; random-access storage; semiconductor process modelling; system-on-chip; thin film transistors; wide band gap semiconductors; 50 nm; CMOS strained silicon devices; Cu; Cu BEOL low-k integration; ESD; FeRAM; MEMS; MRAM; NBTI reliability; RF MEMS; RF power components; SER; SOC; SONOS memory; SRAM; SiGe; SiO/sub 2/; bipolar devices; carrier transport; carrier transport modeling; compound semiconductors; displays; embedded DRAM; flash memory; gate dielectrics; hot carrier effects; inertial MEMS; inorganic thin film transistors; interconnect processes; interconnect reliability; logic; metal gate technology; mixed signal devices; nanocrystal memory; nanoscale phenomena based memories; nonvolatile memory; optical MEMS; optical devices; organic thin film transistors; process modeling; quantum devices; quantum electronics; salicide technologies; sensors; source/drain junctions; thermal effects; wide bandgap power electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269151
Filename
1269151
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