GaN RF oscillator used in space applications

Author

Mostardinha, H. ; Cabral, P.M. ; Carvalho, N.B. ; Kurpas, P. ; Rudolph, M. ; Würfl, J. ; Pinto, J.C. ; Barnes, A. ; Garat, F.

Author_Institution

Inst. de Telecomun., Univ. de Aveiro, Aveiro, Portugal

fYear

2010

fDate

26-27 April 2010

Firstpage

50

Lastpage

53

Abstract

This paper reports the design and implementation of a RF GaN Oscillator for test in space. This circuit/system will be applied in a space test of the European Space Agency and it will be one of the first experiments in space using European GaN devices. The main objective will be to study the material radiation hardness. In this paper we will present the proposed circuit for test and its main design procedure.

Keywords

circuit testing; gallium compounds; radiation hardening; radiofrequency oscillators; space vehicle electronics; wide band gap semiconductors; European GaN devices; European Space Agency; GaN; GaN RF oscillator; circuit testing; material radiation hardness; Breakdown voltage; Circuit testing; FETs; Gallium nitride; HEMTs; III-V semiconductor materials; Oscillators; Radio frequency; Silicon carbide; Space technology; Gallium Nitride; Oscillator; Resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on

Conference_Location

Goteborg

Print_ISBN

978-1-4244-7410-3

Electronic_ISBN

978-1-4244-7412-7

Type

conf

DOI

10.1109/INMMIC.2010.5480142

Filename

5480142