An X-Band GaAs MMIC Doherty Power Amplifier

Author

Colantonio, Paolo ; Giannini, Franco ; Giofre, Rocco ; Limiti, Ernesto ; Piazzon, Luca

Author_Institution

Dept. of Electron. Eng., Univ. of Roma Tor Vergata, Rome, Italy

fYear

2010

fDate

26-27 April 2010

Firstpage

41

Lastpage

44

Abstract

In this contribution, the design of an X-Band MMIC Doherty Power Amplifier (DPA) in GaAs technology is presented. The DPA, based on 2250μm of total gate periphery, will be deeply described with the aim to highlight each design choice. The nonlinear simulation results shown a saturated output power and drain efficiency greater than 30dBm and 47%, respectively. Moreover, in the 6dB of output power back-off, an AM/AM distortion lower than 0.5dB is also demonstrated. Furthermore, 15% of bandwidth is obtained (8.8-10.2 GHz) in which the drain efficiency is maintained greater than 44.5%, with a peak of 50.1% at 10GHz. Finally, the reported preliminary small signal measurements gave a first proof of the design success.

Keywords

MMIC amplifiers; gallium arsenide; power amplifiers; AM/AM distortion; GaAs; X-band GaAs MMIC Doherty power amplifier; drain efficiency; nonlinear simulation; saturated output power; Bandwidth; Design engineering; Frequency; Gallium arsenide; MMICs; Nonlinear distortion; Power amplifiers; Power generation; Topology; Voltage; Doherty Power Amplifier; GaAs; MMIC; X-Band;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on

Conference_Location

Goteborg

Print_ISBN

978-1-4244-7410-3

Electronic_ISBN

978-1-4244-7412-7

Type

conf

DOI

10.1109/INMMIC.2010.5480143

Filename

5480143