DocumentCode :
2586954
Title :
An X-Band GaAs MMIC Doherty Power Amplifier
Author :
Colantonio, Paolo ; Giannini, Franco ; Giofre, Rocco ; Limiti, Ernesto ; Piazzon, Luca
Author_Institution :
Dept. of Electron. Eng., Univ. of Roma Tor Vergata, Rome, Italy
fYear :
2010
fDate :
26-27 April 2010
Firstpage :
41
Lastpage :
44
Abstract :
In this contribution, the design of an X-Band MMIC Doherty Power Amplifier (DPA) in GaAs technology is presented. The DPA, based on 2250μm of total gate periphery, will be deeply described with the aim to highlight each design choice. The nonlinear simulation results shown a saturated output power and drain efficiency greater than 30dBm and 47%, respectively. Moreover, in the 6dB of output power back-off, an AM/AM distortion lower than 0.5dB is also demonstrated. Furthermore, 15% of bandwidth is obtained (8.8-10.2 GHz) in which the drain efficiency is maintained greater than 44.5%, with a peak of 50.1% at 10GHz. Finally, the reported preliminary small signal measurements gave a first proof of the design success.
Keywords :
MMIC amplifiers; gallium arsenide; power amplifiers; AM/AM distortion; GaAs; X-band GaAs MMIC Doherty power amplifier; drain efficiency; nonlinear simulation; saturated output power; Bandwidth; Design engineering; Frequency; Gallium arsenide; MMICs; Nonlinear distortion; Power amplifiers; Power generation; Topology; Voltage; Doherty Power Amplifier; GaAs; MMIC; X-Band;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on
Conference_Location :
Goteborg
Print_ISBN :
978-1-4244-7410-3
Electronic_ISBN :
978-1-4244-7412-7
Type :
conf
DOI :
10.1109/INMMIC.2010.5480143
Filename :
5480143
Link To Document :
بازگشت