Electrical characterization of wafer-scale epitaxial graphene and its RF applications

Author

Lin, Yu-Ming ; Jenkins, Keith A. ; Ott, John ; Dimitrakopoulos, Christos ; Farmer, Damon B. ; Wu, Yanqing ; Grill, Alfred ; Avouris, Phaedon

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by thermal annealing to form one to two layers of graphene. The graphene transistors possess high current density of >; 1mA/μm, and a cutoff frequency of 170 GHz is achieved for graphene FETs with a gate length of 90 nm. These results unravel the great potential of graphene for future RF applications.

Keywords

annealing; epitaxial growth; field effect transistors; graphene; C; C-SiC; RF applications; electrical characterization; frequency 170 GHz; graphene FET; high current density; high-performance graphene field-effect transistors; size 90 nm; thermal annealing; wafer-scale epitaxial graphene; Current measurement; Cutoff frequency; FETs; Frequency measurement; Logic gates; Radio frequency; SiC; epitaxial graphene; field-effect transistor; radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972909

Filename

5972909