Title :
Semi-physical nonlinear model for HEMTs with simple equations
Author :
Oishi, T. ; Otsuka, H. ; Yamanaka, K. ; Inoue, A. ; Hirano, Y. ; Angelov, I.
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
A Nonlinear Circuit Model (NCM) combined with device/physical parameters was developed by using hyperbolic tangent (tanh) function and applied to GaN high electron mobility transistors (HEMTs). The equations for the NCM were constructed to reproduce the results of a device physical simulation. Model parameters are similar with the parameters used in the device design. The simulated DC and capacitance characteristics agree well with the measurement data over wide voltage range. Furthermore, numbers of the parameters were reduced to only 17 by using common physical parameters to both drain current and capacitance models.
Keywords :
III-V semiconductors; capacitance; gallium compounds; high electron mobility transistors; GaN; GaN high electron mobility transistors; HEMT; capacitance models; drain current; hyperbolic tangent function; nonlinear circuit model; semi-physical nonlinear model; Capacitance; Circuit simulation; Circuit synthesis; Electrons; Gallium nitride; HEMTs; MODFETs; Nonlinear circuits; Nonlinear equations; Power system modeling; GaN HEMT; Transistor Models; microwave; physical modeling; power amplifiers; simulation;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on
Conference_Location :
Goteborg
Print_ISBN :
978-1-4244-7410-3
Electronic_ISBN :
978-1-4244-7412-7
DOI :
10.1109/INMMIC.2010.5480149
