Semi-physical nonlinear model for HEMTs with simple equations

Author

Oishi, T. ; Otsuka, H. ; Yamanaka, K. ; Inoue, A. ; Hirano, Y. ; Angelov, I.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan

fYear

2010

fDate

26-27 April 2010

Firstpage

20

Lastpage

23

Abstract

A Nonlinear Circuit Model (NCM) combined with device/physical parameters was developed by using hyperbolic tangent (tanh) function and applied to GaN high electron mobility transistors (HEMTs). The equations for the NCM were constructed to reproduce the results of a device physical simulation. Model parameters are similar with the parameters used in the device design. The simulated DC and capacitance characteristics agree well with the measurement data over wide voltage range. Furthermore, numbers of the parameters were reduced to only 17 by using common physical parameters to both drain current and capacitance models.

Keywords

III-V semiconductors; capacitance; gallium compounds; high electron mobility transistors; GaN; GaN high electron mobility transistors; HEMT; capacitance models; drain current; hyperbolic tangent function; nonlinear circuit model; semi-physical nonlinear model; Capacitance; Circuit simulation; Circuit synthesis; Electrons; Gallium nitride; HEMTs; MODFETs; Nonlinear circuits; Nonlinear equations; Power system modeling; GaN HEMT; Transistor Models; microwave; physical modeling; power amplifiers; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on

Conference_Location

Goteborg

Print_ISBN

978-1-4244-7410-3

Electronic_ISBN

978-1-4244-7412-7

Type

conf

DOI

10.1109/INMMIC.2010.5480149

Filename

5480149