Experimental investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology

An experimental investigation of the low-frequency dispersion affecting the behaviour of microwave devices is reported in this work. The study has been carried out by exploiting two different measurement techniques and experiments have been performed on a GaN based HEMT. In particular, bias and frequency dependence of dynamic characteristics has been clearly observed. Moreover, asymmetric behaviour not exclusively ascribed to the measurement environment (e.g., termination impedance networks) manifests in the non-linear response of the considered device.