Title :
Peculiarities of nonlinear stabilization of plasma-beam instability in semiconductor GaAs
Author :
Averkov, Yuri O. ; Yakovenko, Vladimir M.
Author_Institution :
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
Abstract :
The excitation of nonlinear plasma oscillations by a monoenergetic electron beam of low density moving through a semiconductor is considered by the particle-in-cell method. An electron beam is assumed to be a sequence of electron bundles with constant density. It has been assumed that the electron collision frequency in a semiconductor is greater than the hydrodynamic increment of instability in collisionless plasma but less than plasma electron frequency is investigated. The influence both of nonparabolicity of electron dispersion law and intervalley electron transitions on the plasma-beam instability is taken into account. The nonparabolicity is shown to lead to the decrease of the maximum of the electric field amplitude while the intervalley electron transitions lead to the appearance a plateau on the temporal dependence of the slow amplitude of the electric field.
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; many-valley semiconductors; semiconductor plasma; GaAs; electric field; electron beam; electron dispersion law nonparabolicity; gallium arsenide; intervalley electron transition; nonlinear plasma oscillation; nonlinear stabilization; particle-in-cell method; plasma-beam instability; semiconductor; temporal dependence; Dielectric constant; Effective mass; Electron beams; Frequency; Gallium arsenide; Hydrodynamics; Lattices; Magnetic fields; Out of order; Plasma density;
Conference_Titel :
Mathematical Methods in Electromagnetic Theory, 2002. MMET '02. 2002 International Conference on
Conference_Location :
Kiev, Ukraine
Print_ISBN :
0-7803-7391-X
DOI :
10.1109/MMET.2002.1107048