Peculiarities of nonlinear stabilization of plasma-beam instability in semiconductor GaAs

The excitation of nonlinear plasma oscillations by a monoenergetic electron beam of low density moving through a semiconductor is considered by the particle-in-cell method. An electron beam is assumed to be a sequence of electron bundles with constant density. It has been assumed that the electron collision frequency in a semiconductor is greater than the hydrodynamic increment of instability in collisionless plasma but less than plasma electron frequency is investigated. The influence both of nonparabolicity of electron dispersion law and intervalley electron transitions on the plasma-beam instability is taken into account. The nonparabolicity is shown to lead to the decrease of the maximum of the electric field amplitude while the intervalley electron transitions lead to the appearance a plateau on the temporal dependence of the slow amplitude of the electric field.