DocumentCode :
2587187
Title :
Monolithic MEMS T-type Switch for Redundancy Switch Matrix Applications
Author :
King Yuk Chan ; Daneshmand, M. ; Fomani, A.A. ; Mansour, R.R. ; Ramer, R.
Author_Institution :
Sch. of Electr. & Telecommun. Eng., Univ. of New South Wales, Sydney, NSW
fYear :
2008
fDate :
27-28 Oct. 2008
Firstpage :
486
Lastpage :
489
Abstract :
This paper presents a novel approach to monolithically implementing RF MEMS T-type switches for redundancy switch matrix applications. The T-type switch performs three operational states: two turning states and one crossover state. A six-mask fabrication process is adapted to fabricate the proposed design. Novel RF circuits were used to implement the entire system, including series contact cantilever beams, RF crossover, 90 degree turns and four-port cross junctions. The measured results for the entire T-type switch demonstrate an insertion loss of 1.5 dB, a return loss of better than -20 dB and an isolation higher than 28 dB for all states for frequencies up to 30 GHz. To our knowledge, this is the first time an RF MEMS T-type switch has ever been reported.
Keywords :
cantilevers; microfabrication; microswitches; microwave switches; RF circuits; RF crossover; crossover state; insertion loss; monolithic MEMS T-type switch; redundancy switch matrix; return loss; series contact cantilever beams; turning states; Circuits; Contacts; Fabrication; Frequency measurement; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Structural beams; Switches; Turning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
Type :
conf
DOI :
10.1109/EMICC.2008.4772335
Filename :
4772335
Link To Document :
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