Title :
ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability
Author :
Tseng, H.-H. ; Ramon, M.E. ; Hebert, L. ; Tobin, P.J. ; Triyoso, D. ; Grant, J.M. ; Jiang, Z.X. ; Roan, D. ; Samavedam, S.B. ; Gilmer, D.C. ; Kalpat, S. ; Hobbs, C. ; Taylor, W.J. ; Adetutu, O. ; White, B.E.
Author_Institution :
DigitalDNA Labs., Motorola Inc., Austin, TX, USA
Abstract :
Device instability is one of the most challenging issues to implement high-k gate dielectrics. Incorporation of deuterium during the ALD (atomic layer deposition) process effectively improves the interface quality that enhances high-k device stability and reliability. Compared to H/sub 2/O processed HfO/sub 2/ devices, devices with D/sub 2/O processing result in a significantly smaller Vt shift after constant voltage stressing at room temperature and at 125/spl deg/C under NBTI/PBTI conditions, as well as a longer CHCI lifetime. This process is independent of transistor process integration and is relatively low cost. It has the potential to become an industry standard if ALD high-k gate dielectric processing is the final choice.
Keywords :
MOSFET; atomic layer deposition; deuterium; dielectric thin films; hafnium compounds; semiconductor device reliability; 125 degC; ALD; CHCI lifetime; D/sub 2/O; HfO/sub 2/; MOSFET stability improvement; NBTI/PBTI conditions; atomic layer deposition; constant voltage stressing; deuterium processing; device reliability; heavy water; high-k gate dielectrics; interface quality; Atomic layer deposition; Deuterium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Niobium compounds; Stability; Temperature; Titanium compounds; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269171
