Title :
High-k dielectrics and MOSFET characteristics
Author :
Lee, J.C. ; Cho, H.J. ; Kang, C.S. ; Rhee, S. ; Kim, Y.H. ; Choi, R. ; Kang, C.Y. ; Choi, C. ; Abkar, M.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
High dielectric constant materials have been investigated for gate dielectric applications. In this paper, various techniques (e.g. optimization of interfacial layer, N and Si incorporation and optimized profiles, forming gas anneal) for improving channel mobility, EOT scaling and reliability of high-k devices is discussed.
Keywords :
MOSFET; annealing; carrier mobility; dielectric thin films; doping profiles; optimisation; semiconductor device reliability; EOT scaling; MOSFET characteristics; N incorporation; Si incorporation; channel mobility; doping profile optimization; forming gas anneal; gate dielectrics; high-k device reliability; high-k dielectrics; interfacial layer optimization; Annealing; Degradation; Dielectric devices; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Impurities; Lifting equipment; MOSFET circuits; Nitrogen;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269174
