Title :
Effect of Hf-N bond on properties of thermally stable amorphous HfSiON and applicability of this material to sub-50nm technology node LSIs
Author :
Koike, M. ; Ino, T. ; Kamimuta, Y. ; Koyama, M. ; Kamata, Y. ; Suzuki, M. ; Mitani, Y. ; Nishiyama, A. ; Tsunashima, Y.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Kanagawa, Japan
Abstract :
The electric and structural properties of hafnium silicon oxynitride (HfSiON) with high Hf/(Hf+Si) (35/spl sim/100%) were investigated, focusing on the role of Hf-N bonds inside the material. The results show that the existence of Hf-N bonds in the films result in a high dielectric constant and high thermal stability. Using ultra-thin HfSiON with high Hf and high N concentrations, thermally stable amorphous high-k stacks with EOT of 0.6 nm and with 10/sup -5/ times Jg reduction, relative to that in SiO/sub 2/ was obtained.
Keywords :
dielectric thin films; hafnium compounds; large scale integration; nanoelectronics; silicon compounds; thermal stability; 0.6 nm; 50 nm; EOT; Hf-N bonds; HfSiON; LSI; dielectric constant; high-k dielectric films; high-k stack; thermal stability; thermally stable amorphous HfSiON; Amorphous materials; Atomic layer deposition; Bonding; Hafnium; High-K gate dielectrics; Large scale integration; Optical films; Semiconductor films; Silicon; Spectroscopy;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269177
