Title :
A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar
Author :
Ragonese, E. ; Scuderi, A. ; Palmisano, G.
Author_Institution :
Dipt. di Ing. Elettr. Elettron. e dei Sist., Univ. di Catania, Catania, Italy
Abstract :
In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-μm SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; differential transformers; field effect MMIC; low noise amplifiers; road vehicle radar; BiCMOS LNA; SiGe; automotive short-range radar; current 56 mA; frequency 24 GHz; fully differential transformer-loaded cascode stages; gain 35 dB; low-noise amplifier; size 0.13 μm; variable gain functionality; voltage 2.4 V; Automotive engineering; Germanium silicon alloys; Linearity; Low-noise amplifiers; Noise figure; Performance gain; Radar; Road safety; Silicon germanium;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772341
