DocumentCode
2587376
Title
GaN Doherty Amplifier With Compact Harmonic Traps
Author
Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco ; Piazzon, Luca
Author_Institution
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
526
Lastpage
529
Abstract
In this contribution, the design of an uneven AB-C Doherty power amplifier (DPA) in GaN technology, implementing a new approach to control the higher device harmonics, is presented. The DPA was designed to operate at 2.14 GHz and with the aim to reduce as much as possible the chip size, without losing the Doherty operating principle. The measurement results in CW conditions at 2.14 GHz had shown average drain efficiency higher than 55% at 6 dB of back-off, with a saturated output power of 37 dBm.
Keywords
III-V semiconductors; gallium compounds; microwave power amplifiers; wide band gap semiconductors; CW conditions; Doherty operating principle; GaN; GaN technology; chip size; compact harmonic traps; frequency 2.14 GHz; uneven AB-C Doherty power amplifier; Gallium nitride; High power amplifiers; Impedance; Inverters; Microwave amplifiers; Peak to average power ratio; Phase control; Power generation; Power measurement; Power system harmonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772345
Filename
4772345
Link To Document