Author :
Heinemann, B. ; Barth, R. ; Bolze, D. ; Drews, J. ; Formanek, P. ; Fursenko, O. ; Glante, M. ; Glowatzki, K. ; Gregor, A. ; Haak, U. ; Hoppner, W. ; Knoll, D. ; Kurps, R. ; Marschmeyer, S. ; Orlowski, S. ; Rucker, H. ; Schley, P. ; Schmidt, D. ; Scholz, R
Abstract :
We demonstrate SiGe:C pnp HBTs in a complementary bipolar CMOS flow with f/sub T//f/sub max/ values of 80 GHz/120 GHz at BV/sub CEO/ = 2.6 V and a ring oscillator delay of 8.9 ps. The simultaneously fabricated npn HBTs sustain no significant performance loss compared to the npn-only BiCMOS, confirmed by f/sub T//f/sub max/ values of 180 GHz/185 GHz and a ring oscillator delay of 4.6 ps. A pnp-only BiCMOS flow produces peak f/sub T//f/sub max/ values for pnp devices of 115 GHz/115 GHz. The high speed performance of the pnp transistors surpasses the best reported values of this transistor type substantially.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; 115 GHz; 120 GHz; 180 GHz; 185 GHz; 2.6 V; 4.6 ps; 8.9 ps; 80 GHz; SiGe:C; complementary BiCMOS technology; high speed HBT; npn HBT; pnp HBT; pnp-only BiCMOS flow; ring oscillator delay; BiCMOS integrated circuits; CMOS process; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Oxidation; Protection; Ring oscillators; Silicon germanium;
