DocumentCode
2587405
Title
Ultra low power SiGe:C HBT for 0.18 /spl mu/m RF-BiCMOS
Author
Xu, M.W. ; Decoutere, S. ; Sibaja-Hernandez, A. ; Van Wichelen, K. ; Witters, L. ; Loo, R. ; Kunnen, E. ; Knorr, C. ; Sadovnikov, A. ; Bulucea, Constantin
Author_Institution
ESAT, Katholieke Univ., Leuven, Belgium
fYear
2003
fDate
8-10 Dec. 2003
Abstract
A SiGe:C HBT in 0.18 /spl mu/m BiCMOS is developed for ultra low power applications based on a unique optimization solution, including a dedicated PIN e/b design combined with a two-step Ge profile and a two-step SIC. State-of-the-art performance is achieved with respect to benchmarked low power devices.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; low-power electronics; radiofrequency integrated circuits; semiconductor materials; 0.18 micron; PIN e/b design; RF-BiCMOS; SiGe:C; optimization; two-step Ge profile; two-step SIC; ultra low power HBT; Application specific processors; Boron; Capacitance; Current density; Current measurement; Delay effects; Density measurement; Doping profiles; Heterojunction bipolar transistors; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269181
Filename
1269181
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