Title :
Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS
Author :
Hashimoto, T. ; Nonaka, Y. ; Tominari, T. ; Fujiwara, H. ; Tokunaga, K. ; Arai, M. ; Wada, S. ; Udo, T. ; Seto, Mae ; Miura, M. ; Shimamoto, H. ; Washio, K. ; Tomioka, H.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
200 GHz f/sub T/ SiGe HBTs and 80 nm gate CMOS were successfully integrated using the LP-CVD technique for selective SiGe epitaxial growth. Suppressing base resistance enabled us to achieve f/sub MAX/ of 227 GHz, corresponding to f/sub T/ of 201 GHz. Shrunk HBTs of A/sub E/=0.15/spl times/0.7 /spl mu/m/sup 2/ achieved ECL ring oscillator gate delay of 5.3 ps at Ics=1.2 mA. Self-heating effects on junction temperature and device performance were investigated with an emitter-width scaling effect. A low thermal budget HBT process sustains full compatibility with 0.13 /spl mu/m platforms for large scaled RF ICs.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; chemical vapour deposition; heterojunction bipolar transistors; millimetre wave bipolar transistors; radiofrequency integrated circuits; semiconductor materials; vapour phase epitaxial growth; 0.13 micron; 0.15 micron; 0.7 micron; 1.2 mA; 200 GHz; 201 GHz; 227 GHz; 5.3 ps; 80 nm; CMOS; ECL ring oscillator gate delay; LP-CVD; RF IC; SiGe; SiGe BiCMOS technology; base resistance suppression; emitter-width scaling effect; junction temperature; low thermal budget HBT process; selective epitaxial growth; self-heating effects; BiCMOS integrated circuits; CMOS technology; Delay; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Ring oscillators; Silicon germanium; Temperature;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269182
