Novel self-assembled ultra-low-k porous silica films with high mechanical strength for 45 nm BEOL technology

Author

Oku, Y. ; Yamada, K. ; Goto, T. ; Seino, Y. ; Ishikawa, A. ; Ogatal, T. ; Kohmura, K. ; Fujii, N. ; Hata, N. ; Ichikawa, R. ; Yoshino, T. ; Negoro, C. ; Nakano, A. ; Sonoda, Y. ; Takada, S. ; Miyoshi, H. ; Oike, S. ; Tanaka, H. ; Matsuo, H. ; Kinoshita, K

Author_Institution

MIRAI, Assoc. of Super-Adv. Electron. Technol., Ibaraki, Japan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Novel ultra-low-k porous silica films were developed by use of a self-assembly technology. The mechanical properties of the porous silica films could be reinforced independently of the dielectric constant by introducing a tetramethyl-cyclo-tetra-siloxane (TMCTS) treatment. High modulus porous silica films, with an elastic modulus of 8 GPa and dielectric constant of 2, can be achieved simultaneously. Ultra-low-k/Cu damascene with sufficient mechanical strength was demonstrated for 45 nm BEOL (back-end-of-line) technology.

Keywords

copper; dielectric thin films; elastic moduli; integrated circuit interconnections; integrated circuit metallisation; mechanical strength; permittivity; porous materials; self-assembly; silicon compounds; 45 nm; BEOL technology; Cu-SiO/sub 2/; TMCTS treatment; back-end-of-line technology; dielectric constant; elastic modulus; mechanical strength; porous silica films; self-assembled silica films; self-assembly; tetramethyl-cyclo-tetra-siloxane; ultra-low-k silica films; ultra-low-k/Cu damascene; Calcination; Dielectric constant; Electronics industry; Industrial electronics; Mechanical factors; Periodic structures; Self-assembly; Semiconductor films; Silicon compounds; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269184

Filename

1269184