Title :
A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers
Author :
Kawahara, J. ; Nakano, A. ; Kunimi, N. ; Kinoshita, K. ; Hayashi, Y. ; Ishikawa, A. ; Seino, Y. ; Ogata, T. ; Takahashi, H. ; Sonoda, Y. ; Yoshino, T. ; Goto, T. ; Takada, S. ; Ichikawa, R. ; Miyoshi, H. ; Matsuo, H. ; Adachi, S. ; Kikkawa, T.
Author_Institution :
MIRAI, Assoc. of Super-Adv. Electron. Technol., Ibaraki, Japan
Abstract :
A new plasma-enhanced co-polymerization (PCP) technology is developed for low-k/Cu damascene integration on 300 mm wafers. The concept of the PCP technology is to introduce monomers, which have different functions such as matrix formation, deposition acceleration, or reinforcement, into a reactor exited with a He-plasma. It is shown that the low-k film growth rate from the matrix monomer such as divinyl siloxane-benzocyclobutene (DVS-BCB) and the elastic modulus of the deposited films are enhanced by adding a deposition acceleration monomer and a reinforcement monomer, respectively, without increasing the k-value. Combining the PCP technology with an ultra-low-pressure CMP technique, the Cu damascene interconnects were successfully fabricated on 300 mm wafers.
Keywords :
chemical mechanical polishing; copper; dielectric thin films; elastic moduli; helium ions; integrated circuit interconnections; mechanical strength; permittivity; polymerisation; 300 mm; Cu; Cu damascene interconnects; DVS-BCB; He; He-plasma exited reactor; PCP technology; deposition acceleration monomer; dielectric constant; divinyl siloxane-benzocyclobutene; elastic modulus; low-k film growth rate; low-k/Cu interconnects; matrix formation; matrix monomer; mechanical properties reinforcement; mechanical strength; organic silica; plasma-enhanced co-polymerization; reinforcement monomer; ultra-low-pressure CMP technique; Acceleration; Mechanical factors; Nuclear and plasma sciences; Plasma accelerators; Plasma applications; Plasma properties; Plasma stability; Polymer films; Silicon compounds; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269185
