Bottom-up fill of copper in high aspect ratio via holes by electroless plating

Author

Shingubara, S. ; Wang, Z. ; Yaegashi, O. ; Obata, R. ; Sakaue, H. ; Takahagi, T.

Author_Institution

Graduate Sch. of ADSM, Hiroshima Univ., Japan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

We succeeded in the bottom-up filling of Cu by electroless plating for the first time. Essential points of this technology are the use of an ultra-thin ICB-Pd catalytic layer and the addition of an adequate amount of sulfopropyl sulfonate inhibiter (SPS) to the electroless plating bath. The adhesion strength of the electroless-plated Cu was strong enough to endure against CMP processing, and a 100 nm diameter via hole with 800 nm depth was completely filled by electroless plating only.

Keywords

adhesion; catalysis; chemical mechanical polishing; copper; electroless deposition; integrated circuit interconnections; integrated circuit metallisation; surface chemistry; 100 nm; 800 nm; CMP process; Cu; SPS; adhesion strength; copper bottom-up fill; electroless plating; electroless-plated Cu; high aspect ratio via holes; plating bath; sulfopropyl sulfonate inhibitor; ultra-thin ICB-Pd catalytic layer; via hole depth; Adhesives; Chemical vapor deposition; Conductivity; Copper; Electromigration; Filling; Inhibitors; Ion beams; Polyethylene; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269186

Filename

1269186