Title :
Bottom-up fill of copper in high aspect ratio via holes by electroless plating
Author :
Shingubara, S. ; Wang, Z. ; Yaegashi, O. ; Obata, R. ; Sakaue, H. ; Takahagi, T.
Author_Institution :
Graduate Sch. of ADSM, Hiroshima Univ., Japan
Abstract :
We succeeded in the bottom-up filling of Cu by electroless plating for the first time. Essential points of this technology are the use of an ultra-thin ICB-Pd catalytic layer and the addition of an adequate amount of sulfopropyl sulfonate inhibiter (SPS) to the electroless plating bath. The adhesion strength of the electroless-plated Cu was strong enough to endure against CMP processing, and a 100 nm diameter via hole with 800 nm depth was completely filled by electroless plating only.
Keywords :
adhesion; catalysis; chemical mechanical polishing; copper; electroless deposition; integrated circuit interconnections; integrated circuit metallisation; surface chemistry; 100 nm; 800 nm; CMP process; Cu; SPS; adhesion strength; copper bottom-up fill; electroless plating; electroless-plated Cu; high aspect ratio via holes; plating bath; sulfopropyl sulfonate inhibitor; ultra-thin ICB-Pd catalytic layer; via hole depth; Adhesives; Chemical vapor deposition; Conductivity; Copper; Electromigration; Filling; Inhibitors; Ion beams; Polyethylene; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269186
