• DocumentCode
    2587508
  • Title

    A temperature compensated L-band variable gain amplifier with eight bit digital control

  • Author

    Wallace, P.W. ; Bayruns, J. ; Scheinberg, N. ; Rachlin, M. ; Krautter, H.

  • Author_Institution
    ANADIGICS Inc., Warren, NJ, USA
  • fYear
    1988
  • fDate
    6-9 Nov. 1988
  • Firstpage
    281
  • Lastpage
    284
  • Abstract
    The authors describe a high-performance microwave AGC (automatic gain control) amplifier with an eight bit TTL (transistor-transistor logic)-compatible digital control. The amplifier includes five temperature-compensated gain stages, six RF switches, a 5-bit digital step attenuator, and eight TTL-compatible switch drivers on a single monolithic GaAs integrated circuit operating over an octave of bandwidth in L-band. The most significant performance feature of the amplifier is the ability to maintain both a low noise figure, and a high third-order intercept point throughout most of the gain control range. This is accomplished by embedding three of the stages in switch networks such that the amplifiers can be bypassed with the appropriate control signal. At maximum gain, the noise figure is about 4 dB, and the 1 dB compressed power output is about 16 dBm. The chip is 2.5 by 4.9 mm.<>
  • Keywords
    III-V semiconductors; MMIC; automatic gain control; compensation; digital control; field effect integrated circuits; gallium arsenide; microwave amplifiers; 4 dB; 5-bit digital step attenuator; III-V semiconductors; L-band; MMIC; RF switches; TTL-compatible switch drivers; automatic gain control; eight bit digital control; high third-order intercept point; low noise figure; microwave AGC amplifier; monolithic GaAs integrated circuit; temperature-compensated gain stages; variable gain amplifier; Digital control; Gain control; L-band; Microwave amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Switches; Switching circuits; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
  • Conference_Location
    Nashville, Tennessee, USA
  • Type

    conf

  • DOI
    10.1109/GAAS.1988.11076
  • Filename
    11076