Title :
Monolithic integrated circuit applications of InGaAs/InAlAs HEMTs
Author :
Tut, M. ; Pavlidis, D. ; Ng, G.I. ; Weiss, M. ; Cazaux, J.L.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The features of InGaAs/InAlAs HEMT (high-electron-mobility transistor) technology are discussed in view of its potential for MMIC applications. Small- and large-signal characteristics benefit from the introduction of a strained layer in the channel. InGaAs HEMTs have a third-order intermodulation distortion point 4-dB higher than GaAs/AlGaAs, and are therefore very suitable for full multistage amplifier integration. A first demonstration of integration capability is shown with monolithic InGaAs attenuators which show 1.5-dB insertion loss and 18-dB dynamic range from 545 MHz to 25 GHz.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; attenuators; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; solid-state microwave devices; 1.5 dB; 545 MHz to 25 GHz; HEMT; III-V semiconductors; InGaAs-InAlAs; MMIC applications; high-electron-mobility transistor; insertion loss; large-signal characteristics; monolithic InGaAs attenuators; monolithic microwave ICs; multistage amplifier integration; small signal characteristics; strained layer; Attenuators; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Integrated circuit technology; Intermodulation distortion; MMICs; MODFETs; Monolithic integrated circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11079
