A Novel Silicon High Voltage Vertical MOSFET Technology for a 100W L-Band Radar Application

The silicon vertical MOSFET RF power amplifier described in this paper is the industry´s first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P 1 dB compression across 200 MHz of bandwidth at L-Band from 1.2 GHz to 1.4 GHz. The DC characteristics include a BVdss of 115 volts enabling high voltage operation with a 48 V power supply.