Title :
OMVPE grown GaAs MESFETs with step-doped channel for MMICs
Author :
Nakajima, S. ; Otobe, K. ; Katsuyama, T. ; Shiga, N. ; Hayashi, H.
Author_Institution :
Sumitomo Electr. Inc., Yokohama, Japan
Abstract :
A GaAs MESFET structure with a step-doped channel grown by OMVPE (organometallic chemical-vapor deposition) has been developed for MMIC (monolithic microwave integrated circuit) applications. A high-purity, unintentionally doped p/sup -/ buffer layer and a highly doped thin active channel suppress the short channel effect. High performance and quite uniform device characteristics have been obtained by using an n/sup +/ self-aligned implantation technique. The transconductance is over 200 mS/mm at a low drain current ( approximately=0.1 I/sub dss/) and the drain current characteristics also show good linearity. The standard deviation of threshold voltage is 8% for 0.35- mu m gate FET over a 2" Phi wafer.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; ion implantation; semiconductor growth; vapour phase epitaxial growth; 0.35 micron; 200 mS; GaAs; III-V semiconductor; MMIC; MMICs; OMVPE; drain current characteristics; highly doped thin active channel; monolithic microwave integrated circuit; n/sup +/ self-aligned implantation; organometallic chemical-vapor deposition; step-doped channel; transconductance; unintentionally doped p/sup -/ buffer layer; Application specific integrated circuits; Buffer layers; Chemicals; Gallium arsenide; MESFET integrated circuits; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11080
