Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory

Author

Xiaonan Yang ; Zhiwei Zheng ; Yan Wang ; Zongliang Huo ; Lei Jin ; Dandan Jiang ; Zhongyong Wang ; Shengfen Chiu ; Hanming Wu ; Ming Liu

Author_Institution

Inst. of Microelectron., Beijing, China

Volume

36

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

26

Lastpage

28

Abstract

The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed.

Keywords

1/f noise; NOR circuits; flash memories; integrated circuit noise; integrated memory circuits; random noise; 1/f noise; NOR flash memory; RTN; complex random telegraph noise behavior; gate bias dependence; noise-type transition; process-induced trap; size 65 nm; spectroscopic analysis; stress-induced trap; threshold voltage; transition voltage; 1f noise; Flash memories; Logic gates; Threshold voltage; Tunneling; Memories; Random noise; memories;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2367104

Filename

6945790