High-efficiency X- and Ku-band power FETs fabricated using refractory SAG technology

Author

Geissberger, A.E. ; Sadler, R.A. ; Balzan, M.L. ; Menk, G.E. ; Bahl, I.J. ; Griffin, E.L.

Author_Institution

ITT GaAs Technol. Center, Roanoke, VA, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

309

Lastpage

312

Abstract

The authors report the measured microwave performance of GaAs power FETs fabricated using a highly manufacturable refractory self-aligned gate technology. Consideration is given to details of the epitaxial growth of the unintentionally doped GaAs on Al/sub 0.47/Ga/sub 0.53/As buffer layers; a brief description of the device fabrication process, which includes doping of the active layer by selective ion implantation and subsequent furnace annealing; and measured DC and RF performance of 1.25- and 0.3-mm wide FETs at 10 and 18 GHz, respectively.<>

Keywords

III-V semiconductors; aluminium compounds; epitaxial growth; field effect transistors; gallium arsenide; power transistors; semiconductor growth; solid-state microwave devices; 0.3 mm; 1.25 mm; 10 to 18 GHz; Al/sub 0.47/Ga/sub 0.53/As buffer layers; GaAs-Al/sub 0.47/Ga/sub 0.53/As; III-V semiconductors; Ku-band; SHF; X-band; active layer doping; device fabrication process; epitaxial growth; furnace annealing; microwave performance; power FETs; refractory SAG technology; selective ion implantation; self-aligned gate; unintentionally doped GaAs; Buffer layers; Epitaxial growth; FETs; Fabrication; Gallium arsenide; Manufacturing; Microwave devices; Microwave measurements; Microwave technology; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11083

Filename

11083