Title :
Experimental and Monte Carlo analysis of drain-avalanche hot-hole injection for reliability optimization in Flash memories
Author :
Ielmini, D. ; Ghetti, A. ; Beltrami, S. ; Spinelli, A.S. ; Lacaita, Andrea L. ; Visconti, A.
Author_Institution :
Dipt. di Elettronica a Informazione, Politecnico di Milano, Italy
Abstract :
We present a detailed experimental and numerical analysis of drain avalanche hot-hole injection (DAHHI) in Flash memories. By using carrier-separation techniques, we provide new methods to separately estimate hot-hole impact-ionization and injection into the floating-gate (FG). Monte Carlo (MC) calculations are shown, in good agreement with data, and are used to investigate programming conditions which minimize tunnel-oxide degradation.
Keywords :
Monte Carlo methods; circuit optimisation; flash memories; hot carriers; impact ionisation; integrated circuit reliability; DAHHI; Flash memories; Monte Carlo analysis; carrier-separation techniques; drain-avalanche hot-hole injection; floating-gate; hot-hole impact-ionization; memory programming conditions; reliability optimization; tunnel-oxide degradation minimization; Charge carrier processes; Degradation; Electron traps; Flash memory; Hot carriers; Monte Carlo methods; Nonvolatile memory; Tail; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269198
