Title :
Will the best GaAs digital technology please stand up?
Author :
Cirillo, N.C., Jr.
Author_Institution :
Honeywell, Bloomington, MN, USA
Abstract :
Presents panel discussions held at the conference proceedings.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; integrated circuit technology; linear integrated circuits; monolithic integrated circuits; technological forecasting; GaAs digital technology; HBT; HEMT; III-V semiconductors; epitaxial MODFET; heterojunction bipolar transistor; ion-implanted MESFET; linear technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11086
