DocumentCode
2587706
Title
Will the best GaAs digital technology please stand up?
Author
Cirillo, N.C., Jr.
Author_Institution
Honeywell, Bloomington, MN, USA
fYear
1988
fDate
6-9 Nov. 1988
Firstpage
321
Abstract
Presents panel discussions held at the conference proceedings.
Keywords
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; integrated circuit technology; linear integrated circuits; monolithic integrated circuits; technological forecasting; GaAs digital technology; HBT; HEMT; III-V semiconductors; epitaxial MODFET; heterojunction bipolar transistor; ion-implanted MESFET; linear technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location
Nashville, Tennessee, USA
Type
conf
DOI
10.1109/GAAS.1988.11086
Filename
11086
Link To Document