Statistical simulations to inspect and predict data retention and program disturbs in flash memories

Author

Larcher, L. ; Pavan, P.

Author_Institution

INFM, Univ. di Modena a Reggio Emilia, Italy

fYear

2003

fDate

8-10 Dec. 2003

Abstract

A new statistical model of stress-induced leakage current (SILC) is implemented and used to predict data retention and program disturbs of state-of-the-art flash memories, and to correlate oxide characterization outputs (density, cross section, energy level of defects) to flash memory reliability. Physical mechanisms inducing the largest threshold voltage (V/sub T/) degradation are explained, and tunnel oxide scaling effects on flash reliability are predicted.

Keywords

flash memories; integrated circuit modelling; integrated circuit reliability; leakage currents; statistical analysis; SILC; data retention; defect energy level; flash memory reliability; leakage current statistics; oxide characterization outputs; oxide cross section; oxide density; program disturbs; statistical simulations; stress-induced leakage current; threshold voltage degradation; tunnel oxide scaling effects; Area measurement; Current measurement; Degradation; Failure analysis; Flash memory; Flash memory cells; Leakage current; Predictive models; Statistics; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269201

Filename

1269201