Title :
Backgating-the next major barrier to VLSI
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
Presents panel discussions held at the conference proceedings.
Keywords :
III-V semiconductors; VLSI; gallium arsenide; integrated circuit technology; large scale integration; monolithic integrated circuits; GaAs; LSI circuits; VLSI; backgating; monolithic IC; processing techniques;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11087
