Title :
Ruggedness of high voltage diodes under very hard Commutation Conditons
Author :
Heinze, B. ; Lutz, J. ; Felsl, H.P. ; Schulze, H.-J.
Author_Institution :
Chemnitz Univ. of Technol., Chemnitz
Abstract :
The possibility for reducing losses in high-voltage IGBT applications is determined by the ruggedness of the associated freewheeling diode (FWD). In this paper the influence of buffer structures and edge termination on the ruggedness of fast recovery diodes in a voltage range of 3.3 kV are analyzed using isothermal and electro-thermal device simulations.
Keywords :
commutation; high-voltage techniques; power semiconductor devices; semiconductor diodes; buffer structures; edge termination; electro-thermal device simulations; fast recovery diodes; freewheeling diode; hard commutation conditions; high voltage diodes; high-voltage IGBT applications; isothermal device simulations; power semiconductor device; Analytical models; Cathodes; Chemical technology; Doping; Insulated gate bipolar transistors; Isothermal processes; Semiconductor diodes; Switches; Transient analysis; Voltage; Free-wheeling diode (FWD; Power semiconductor device; Reliability; Robustness; Simulation;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417776
