Title :
Large-area InAlAs/InGaAs Schottky barrier enhanced metal semiconductor metal photodiode with low dark current
Author :
Kim, J.-B. ; Kim, M.-J. ; Park, J.-W. ; Kim, D.H. ; Kim, S.-J. ; Hwang, W.Y. ; Miller, D.L. ; Das, M.B. ; Rios, J.M.M. ; Lunardi, L.M.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
The layer structure consists of a 300 nm-thick InAlAs buffer layer, a 27 nm-thick composition graded InAlAs-InGaAs short period superlattice (SPSL) layer, a 1.0 μm-thick InGaAs photoabsorption layer, a 27 nm-thick InAlAs-lnGaAs SPSL, and a 30 nm-thick InAlAs Schottky barrier enhancement layer. We report in this talk a dark current of 38 nA a capacitance of 0.8 pF, and a 3-dB bandwidth of 2.4 GHz obtained from 300x300 μm device with 4 μm finger spacing using lattice matched InAlAs Schottky barrier enhancement layer
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodiodes; semiconductor superlattices; 0.8 pF; 1 mum; 27 nm; 30 nm; 300 mum; 38 nA; 4 mum; InAlAs buffer layer; InAlAs-InGaAs; InAlAs/InGaAs Schottky barrier enhanced metal semiconductor metal photodiode; InGaAs photoabsorption layer; MSM photodiode; capacitance; composition graded InAlAs-InGaAs short period superlattice; dark current; finger spacing; lattice matched InAlAs Schottky barrier enhancement layer; layer structure; low dark current; Bandwidth; Buffer layers; Capacitance; Dark current; Fingers; Indium compounds; Indium gallium arsenide; Lattices; Schottky barriers; Superlattices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571842
