Title :
A high-Q magnetostatically-tunable all-silicon evanescent cavity resonator
Author :
Arif, Muhammad Shoaib ; Irshad, Wasim ; Liu, Xiaoguang ; Chappell, William J. ; Peroulis, Dimitrios
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
Abstract :
We present, for the first time, an all-silicon magnetostatically-tunable evanescent-mode cavity resonator that is capable of analog tuning from 9.5 to 17 GHz (1:1.8) while maintaining a high unloaded quality factor (Q) of 650-950 (70-80% of the simulated results). The resonator is fabricated using silicon micromachining and is tuned by moving a gold-covered single-crystal silicon diaphragm over the capacitive post using magnetostatic actuation. The overall volume of the complete device is 600-mm3 including the tuning mechanism. Both the experimental and modeling results show that high-Q all-silicon tunable resonators can be achieved by minimizing the cavity-wall roughness and ensuring a highly conductive gold-gold thermocompression bonding between the diaphragm and cavity.
Keywords :
Q-factor; cavity resonators; elemental semiconductors; microwave resonators; silicon; Si; frequency 9.5 GHz to 17 GHz; gold-covered single-crystal silicon diaphragm; high unloaded quality factor; high-Q magnetostatic-tunable all-silicon evanescent cavity resonator; magnetostatic actuation; silicon micromachining; thermocompression bonding; Bonding; Cavity resonators; Coils; Gold; Magnetostatics; Silicon; Tuning; Evanescent-mode cavity; MEMS; magnetostatic; silicon; tunable filter; tunable resonator;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972966