GaAs devices and the MIC applications in satellite broadcasting

Author

Konishi, Y.

Author_Institution

Uniden Corp., Ichikawa, Japan

fYear

1990

fDate

7-8 May 1990

Firstpage

1

Lastpage

6

Abstract

GaAs devices, such as low-noise high-electron-mobility transistors (HEMT), low-noise FET, and wideband UHF amplifiers. are used extensively for satellite broadcasting receivers, especially in LNBs (low-noise block downconverters). The Ku-band prescaler for nonadjusting local oscillators, the active bandpass filter for miniaturized filters, and the monolithic ICs for high-volume production have been developed recently. A summary of information on GaAs devices and the monolithic microwave ICs (MMICs) is presented. Opinions on the merits and future availability of MMICs and discrete circuits are given. The status of satellite broadcasting in Japan is discussed.<>

Keywords

III-V semiconductors; MMIC; direct broadcasting by satellite; gallium arsenide; solid-state microwave circuits; solid-state microwave devices; DBS; GaAs devices; HEMT; Japan; Ku-band prescaler; MMICs; active bandpass filter; broadcasting receivers; discrete circuits; high-electron-mobility transistors; high-volume production; low-noise FET; low-noise block downconverters; miniaturized filters; monolithic microwave ICs; nonadjusting local oscillators; satellite broadcasting; wideband UHF amplifiers; Band pass filters; Broadband amplifiers; FETs; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Satellite broadcasting;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110925

Filename

110925