DocumentCode :
2588403
Title :
Molecular thin film transistors with a subthreshold swing of 100 mV/decade
Author :
Klauk, Hagen ; Halik, M. ; Zschieschang, Ute ; Schmid, G. ; Dehm, C. ; Brederlow, Ralf ; Briole, S.
Author_Institution :
New Memory Platforms, Mater. & Technol., Infineon Technol., Erlangen, Germany
fYear :
2003
fDate :
8-10 Dec. 2003
Abstract :
We have developed a molecular thin film transistor concept based on a high-mobility organic semiconductor (pentacene) and an ultra-thin, molecular self-assembling monolayer (SAM) gate dielectric. These transistors operate at voltages between 1 and 3 V, with a subthreshold swing as low as 100 mV/decade. For a transistor with a channel length of 5 /spl mu/m, we have measured a transconductance of 0.01 /spl mu/S//spl mu/m, to our knowledge the largest transconductance reported for an organic semiconductor device.
Keywords :
molecular electronics; monolayers; organic semiconductors; self-assembly; semiconductor device measurement; semiconductor device models; thin film transistors; 1 to 3 V; 5 micron; SAM; TFT; high-mobility organic semiconductor; molecular self-assembling monolayer; molecular thin film transistors; pentacene; transconductance; transistor channel length; transistor subthreshold swing; ultra-thin gate dielectric; Active matrix technology; Chemical technology; Dielectric substrates; Dielectric thin films; Fabrication; Organic semiconductors; Pentacene; Thin film transistors; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
Type :
conf
DOI :
10.1109/IEDM.2003.1269240
Filename :
1269240
Link To Document :
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