Title :
GaAs HBT MMIC broadband amplifiers from DC to 20 GHz
Author :
Kobayashi, K.W. ; Umemoto, D.K. ; Esfandiari, R. ; Oki, A.K. ; Pawlowicz, L.M. ; Hafizi, M.E. ; Tran, L. ; Camou, J.B. ; Stolt, K.S. ; Streit, D.C. ; Kim, M.E.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
Three monolithic wideband and high-gain amplifiers implemented with 2-3- mu m GaAs heterojunction bipolar transistor (HBT) monolithic microwave IC (MMIC) technology are presented. A single-stage direct-coupled amplifier achieves a 3-dB bandwidth from DC to 20 GHz, which is believed to be the widest bandwidth reported for direct-coupled amplifiers. The amplifier has a 6-dB nominal gain with a peak gain of 7.3 dB at 10 GHz. The 1-dB compression is 10 dBm at midband, and the noise figure is between 7 and 10 dB over the bandwidth. A two-stage version of this amplifier achieves 14.5-dB gain up to 12 GHz. Its output power and noise performance are comparable to the single-stage version. The third wideband amplifier design is based on passive component and microstrip matching circuitry. The matched amplifier has 14.5-dB nominal gain with a 3-dB bandwidth from 5 to 12 GHz.<>
Keywords :
III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; microwave amplifiers; wideband amplifiers; 0 to 20 GHz; 2 to 3 micron; 20 GHz; 6 to 14.5 dB; 7 GHz; 7 to 10 dB; GaAs; HBT; MMIC; bipolar IC; broadband amplifiers; direct-coupled amplifier; heterojunction bipolar transistor; high-gain amplifiers; matched amplifier; microstrip matching circuitry; monolithic microwave IC; passive component; single-stage version; two-stage version; wideband amplifier; Bandwidth; Bipolar integrated circuits; Broadband amplifiers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MCS.1990.110929
