Title :
5-100 GHz InP CPW MMIC 7-section distributed amplifier
Author :
Majidi-Ahy, R. ; Riaziat, M. ; Nishimoto, C. ; Glenn, M. ; Silverman, S. ; Weng, S. ; Pao, Y.C. ; Zdasiuk, G. ; Bandy, S. ; Tan, Z.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
The development of a single-stage 5-100-GHz InP monolithic microwave IC (MMIC) amplifier with an average gain of more than 5.0 dB is reported. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported for wideband amplifiers. The active devices in this seven-section distributed amplifier are 0.1- mu m mushroom-gate InGaAs-InAlAs lattice-matched HEMTs on a semiinsulating InP substrate. Coplanar waveguide is the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 by 860 mu m. This is the first 100-GHz coplanar waveguide circuit on an InP substrate.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; linear integrated circuits; microwave amplifiers; wideband amplifiers; 0.1 micron; 5 dB; 5 to 100 GHz; CPW; InGaAs-InAlAs; InP; MMIC; coplanar waveguide circuit; distributed amplifier; lattice-matched HEMTs; monolithic microwave IC; mushroom-gate; semiinsulating InP substrate; Broadband amplifiers; Coplanar waveguides; Distributed amplifiers; Frequency; Indium phosphide; MMICs; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MCS.1990.110932
