DocumentCode
2588585
Title
Latest power devices for photovoltaic inverters
Author
Fujihira, T. ; Otsuki, A. ; Takahashi, Y. ; Ide, T. ; Kawano, M. ; Eguchi, N.
Author_Institution
Fuji Electr. Co., Ltd., Fuji, Japan
fYear
2012
fDate
28-31 May 2012
Firstpage
1791
Lastpage
1794
Abstract
Excellent electrical properties of latest power devices for improving the efficiency of PV inverters are presented. Power modules using SiC-MOSFET and -SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99.0%. Silicon IGBT modules using RB-IGBT have enabled to mass-produce PV inverters with peak efficiency of 98.4%. Silicon SJ-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.
Keywords
MOSFET; Schottky diodes; insulated gate bipolar transistors; invertors; photovoltaic power systems; power semiconductor devices; semiconductor junctions; silicon; silicon compounds; wide band gap semiconductors; PV inverter; RB-IGBT; SBD; Si; SiC; SiC-MOSFET; discrete IGBT; photovoltaic inverter; power device; power module; silicon IGBT module; silicon SJ-MOSFET; Insulated gate bipolar transistors; Inverters; Multichip modules; Photovoltaic systems; Prototypes; Silicon; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics (ISIE), 2012 IEEE International Symposium on
Conference_Location
Hangzhou
ISSN
2163-5137
Print_ISBN
978-1-4673-0159-6
Electronic_ISBN
2163-5137
Type
conf
DOI
10.1109/ISIE.2012.6237363
Filename
6237363
Link To Document