Title :
Latest power devices for photovoltaic inverters
Author :
Fujihira, T. ; Otsuki, A. ; Takahashi, Y. ; Ide, T. ; Kawano, M. ; Eguchi, N.
Author_Institution :
Fuji Electr. Co., Ltd., Fuji, Japan
Abstract :
Excellent electrical properties of latest power devices for improving the efficiency of PV inverters are presented. Power modules using SiC-MOSFET and -SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99.0%. Silicon IGBT modules using RB-IGBT have enabled to mass-produce PV inverters with peak efficiency of 98.4%. Silicon SJ-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.
Keywords :
MOSFET; Schottky diodes; insulated gate bipolar transistors; invertors; photovoltaic power systems; power semiconductor devices; semiconductor junctions; silicon; silicon compounds; wide band gap semiconductors; PV inverter; RB-IGBT; SBD; Si; SiC; SiC-MOSFET; discrete IGBT; photovoltaic inverter; power device; power module; silicon IGBT module; silicon SJ-MOSFET; Insulated gate bipolar transistors; Inverters; Multichip modules; Photovoltaic systems; Prototypes; Silicon; Silicon carbide;
Conference_Titel :
Industrial Electronics (ISIE), 2012 IEEE International Symposium on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4673-0159-6
Electronic_ISBN :
2163-5137
DOI :
10.1109/ISIE.2012.6237363
